Detailed technical parameters Parameter Value Package TO-220AB Circuit Discrete Polarity N VBRDSS (V) 75 RDS (on) 10V (mOhms) 13.0 ID @ 25C (A) 82 ID @ 100C (A) 58 Qg Typ 106.7 Qgd Typ 36.7 Rth (JC ) 0.75 Power Dissipation (W) 200 PbF - FETD PbFOption Available genuine original, imported new, lead-free, long-term supply. Product Description Brand / trademark ADV American advanced semiconductor Model / Specifications IRF2807PBF kind of insulated gate (MOSFET) channel conductivity type N-channel enhancement mode uses A / wideband amplification package outline CER-DIP / ceramic DIP material ALGaAS aluminum gallium arsenide turn-on voltage 10 (V) pinch-off voltage of 20 (V) transconductance 30 (μS) electrode capacitance 10 (pF) low-frequency noise figure 20 (dB) maximum drain current 30 (mA) maximum power dissipation 100 (mW)